Behaviour of Metal Deposition from High-Purity Water During Wafer Rinsing Process

Date Published: 2010 | Technical journal archive

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Reducing semiconductor device size heightens the sensitivity to metal contamination with metal variations often effecting the device performance through different mechanisms. This article examines the metal deposition from ultrapure water, deionized water with low-part per trillion metal concentration and explains the results of this in terms of equilibrium adsorption of metal from deionized water.

Companies: IBM
Authors: Jeff Chapman, Richard Godec,
Tags: materials of constructionDeionised WaterCleaning

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