Critical feature sizes of modern semiconductor devices have surpassed the capabilities of traditional optical-based methods to measure particle concentrations in process chemicals and on wafers. Without adequate metrology for quantifying particle and particle precursor concentration in process chemicals, device makers face challenges correlating component failures and fabrication steps. This is especially true for organic material released by Final Polish Ion Exchange resin during a rinse cycle, which is not detected efficiently using optical methods. In this work, we describe two state-of-the-art measurement methods that can detect organic particles and particle precursors to 3 nm using Aerosolization and Threshold Particle Counting (TPC) and defects from UPW deposited on a wafer surface down to 8 nm using Surfaced Enhanced Particle Sizing (SEPS)